A comprehensive geometry-dependent macromodel for substrate noise coupling in heavily doped CMOS processes

被引：30

作者：

Ozis, D ^{[1
]}

Fiez, T ^{[1
]}

Mayaram, K ^{[1
]}

机构：

[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97330 USA

来源：

PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2002年

关键词：

D O I：

10.1109/CICC.2002.1012887

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separation and size. Extensive experimental validations of the model have demonstrated that the modeled Z parameters are most often accurate to within 2-8%.

引用

页码：497 / 500

页数：4

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