Room-temperature photoluminescence in quasi-2D TlGaSe2 and TlInS2 semiconductors

被引：7

作者：

Grivickas, Vytautas ^{[1
]}

Gulbinas, Karolis ^{[1
]}

Gavryushin, Vladimir ^{[1
]}

Bikbajevas, Vitalijus ^{[1
]}

Korolik, Olga V. ^{[2
]}

Mazanik, Alexander V. ^{[2
]}

Fedotov, Alexander K. ^{[2
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, LT-10223 Vilnius, Lithuania

[2] Belarusian State Univ, Dept Energy Phys, Minsk 220030, BELARUS

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 07期

关键词：

thallium dichalcogenides; photoluminescence; optical absorption; anisotropy; EDGE;

D O I：

10.1002/pssr.201409148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We reveal the intrinsic band-to-band photoluminescence (PL) in Tl-based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for k. c, where c is the layers stacking axis, and is dependent on polarization. In TlGaSe2, the band edge absorption spectra were determined at different excitation geometry by using techniques of depth-resolved free-carrier absorption (FCA) and photoacoustic response (PAR). A strong absorption enhancement is detected in a large spectral area in the near-surface region lateral to ab plane. The band-to-band absorption enhancement is the most probable cause for high PL intensity. The near-surface behavior, different from the bulk, might implement useful photonic functionality at room temperature (RT).(C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：639 / 642

页数：4

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