Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices -: art. no. 193304

被引：109

作者：

Mani, RG

Smet, JH

von Klitzing, K

Narayanamurti, V

Johnson, WB

Umansky, V

机构：

[1] Harvard Univ, Gordon McKay Lab Appl Sci, Cambridge, MA 02138 USA

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[3] Harvard Univ, Cambridge, MA 02138 USA

[4] Univ Maryland, Lab Phys Sci, College Pk, MD 20740 USA

[5] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.69.193304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron are evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.

引用

页码：193304 / 1

页数：4

共 37 条

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