A wafer-capped, high-lifetime ohmic MEMS RF switch

被引：31

作者：

Lampen, J ^{[1
]}

Majumder, S ^{[1
]}

Morrison, R ^{[1
]}

Chaudhry, A ^{[1
]}

Maciel, J ^{[1
]}

机构：

[1] Radant MEMS Inc, Stow, MA 01775 USA

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2004年 / 14卷 / 04期

关键词：

MEMS; switch; lifetime; ohmic;

D O I：

10.1002/mmce.20020

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

An electrostatically actuated broadband ohmic microswitch has been developed for RF and microwave applications. The switch is a three-terminal device based on a cantilever beam and is fabricated using an all-metal, surface-micromachining process. It operates in a hermetic environment obtained through a glass frit wafer-bonding process. RF lifetimes greater than 1010 cycles have been achieved for the wafer capped switch. Typical insertion loss and isolation for a 2-contact switch at 10 GHz are 0.4 and 20 dB, respectively, while the 8-contact switch yields an insertion loss and isolation of 0.2 dB and 27 dB at 2 GHz, respectively. (C) 2004 Wiley Periodicals, Inc.

引用

页码：338 / 344

页数：7

共 6 条

[1]

BROWN ER, 1998, IEEE T MICROW THEORY, P46

[2]

MAJUMDER S, 2002, P SENS EXP BOST MA

[3]

MAJUMDER S, 1997, P INT C SOL STAT SEN

[4] RF MEMS SWITCHES AND SWITCH CIRCUITS [J].