A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm

被引：14

作者：

Slipchenko, S. O. ^{[1
]}

Podoskin, A. A. ^{[1
]}

Rozhkov, A. V. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

Bagaev, T. A. ^{[2
]}

Konyaev, V. P. ^{[2
]}

Ladugin, M. A. ^{[2
]}

Marmalyuk, A. A. ^{[2
]}

Padalitsa, A. A. ^{[2
]}

Simakov, V. A. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Stelmakh Res & Dev Inst Polyus, Moscow 117342, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 08期

基金：

俄罗斯科学基金会;

关键词：

RANGE; TRANSISTOR; SWITCHES;

D O I：

10.1063/1.4893956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results obtained demonstrate that the lasing dynamics reflects the current dynamics formed as a result of complex nonlinear couplings within the laser-thyristor heterostructure. The observed specific features mainly result from the appearance of new channels for generation of excess carriers in the p-base. These channels enhance the main optical activation channel formed by the photogeneration due to the absorption of the spontaneous emission from the active region of the laser part of the heterostructure. The additional channels of excess carrier generation may have an optical nature in the case of scattered laser light upon appearance of new high-Q modes. For nearly critical blocked voltages, generation of carriers can be initiated by an avalanche multiplication of photogenerated carriers. (c) 2014 AIP Publishing LLC.

引用

页数：6

共 15 条

[1]

ALFEROV ZI, 1986, PISMA ZH TEKH FIZ+, V12, P1281

[2]

Blicher A., 1976, THYRISTOR PHYS

[3] Transient characteristics of reversely switched dynistors in the submicrosecond pulse range [J].

Gorbatyuk, A. V. ;

Ivanov, B. V. ;

Panaiotti, I. E. ;

Serkov, F. B. .

TECHNICAL PHYSICS LETTERS, 2012, 38 (04) :392-395

[4]

KOROLKOV VI, 1992, PISMA ZH TEKH FIZ+, V18, P26

[5] Fundamental aspects of closed optical mode formation in Fabry-Perot semiconductor lasers based on AlGaAs/GaAs (905 nm) asymmetric heterostructures [J].

Slipchenko, S. O. ;

Podoskin, A. A. ;

Pikhtin, N. A. ;

Tarasov, I. S. .

LASER PHYSICS, 2014, 24 (10)

[6] On the control efficiency of a high-power laser thyristor emitting in the 890-910 nm spectral range [J].

Slipchenko, S. O. ;

Podoskin, A. A. ;

Vasil'eva, V. V. ;

Pikhtin, N. A. ;

Rozhkov, A. V. ;

Gorbatyuk, A. V. ;

Zolotarev, V. V. ;

Veselov, D. A. ;

Jabotinskii, A. V. ;

Petukhov, A. A. ;

Tarasov, I. S. ;

Bagaev, T. A. ;

Zverkov, M. V. ;

Konyaev, V. P. ;

Kurniavko, Y. V. ;

Ladugin, M. A. ;

Lobintsov, A. V. ;

Marmalyuk, A. A. ;

Padalitsa, A. A. ;

Simakov, V. A. .

SEMICONDUCTORS, 2014, 48 (05) :697-699

[7] Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers [J].

Slipchenko, S. O. ;

Podoskin, A. A. ;

Vinokurov, D. A. ;

Stankevich, A. L. ;

Leshko, A. Y. ;

Pikhtin, N. A. ;

Zabrodskiy, V. V. ;

Tarasov, I. S. .

SEMICONDUCTORS, 2011, 45 (10) :1378-1385

[8] High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength [J].

Slipchenko, Sergey O. ;

Podoskin, Aleksandr A. ;

Rozhkov, Alexsander V. ;

Pikhtin, Nikita A. ;

Tarasov, Ilya S. ;

Bagaev, Timur A. ;

Zverkov, Mikhail V. ;

Konyaev, Vadim P. ;

Kurniavko, Yuriy V. ;

Ladugin, Maxim A. ;

Marmalyuk, Aleksandr A. ;

Padalitsa, Anatoliy A. ;

Simakov, Vladimir A. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (17) :1664-1667

[9] High power CW (16 W) and pulse (145 W) laser diodes based on quantum well heterostructures [J].

Tarasov, Ilya S. ;

Pikhtin, Nikita A. ;

Slipchenko, Sergey O. ;

Sokolova, Zinaida N. ;

Vinokurov, Dmitry A. ;

Borschev, Kirill S. ;

Kapitonov, Vladimir A. ;

Khomylev, Maxim A. ;

Leshko, Andrey Yu. ;

Lyutetskiy, Andrey V. ;

Stankevich, Alexey L. .

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2007, 66 (4-5) :819-823

[10] Superfast high-current switching of GaAs avalanche transistor [J].

Vainshtein, S ;

Kostamovaara, J ;

Sveshnikov, Y ;

Gurevich, S ;

Kulagina, M ;

Yuferev, V ;

Shestak, L ;

Sverdlov, M .

ELECTRONICS LETTERS, 2004, 40 (01) :85-86

← 1 2 →