Selective Growth of Buried n+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film

被引：51

作者：

Kato, Hiromitsu ^{[1
]}

Makino, Toshiharu ^{[1
]}

Ogura, Masahiko ^{[1
]}

Tokuda, Norio ^{[1
]}

Okushi, Hideyo ^{[1
]}

Yamasaki, Satoshi ^{[1
,2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 05期

关键词：

JUNCTION; EMISSION;

D O I：

10.1143/APEX.2.055502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heavily phosphorus doping (n(+)) is a promising technique to reduce the resistance of n-type diamond. We propose a selective (111) direction growth technique on (001) diamond films, which enables n(+) diamond to be fabricated even on the (001) orientation. The maximum concentration of about 10(20) cm(-3) was observed by secondary ion mass spectroscopy, although the distribution of phosphorus depth was not uniform. Electrical properties of selectively grown n(+) diamond were characterized by current-voltage experiments. Clear conduction was found along the line and space structure of n(+) diamond, and its resistivity was determined to be as low as similar to 3 x 10(2) Omega cm, which is four orders of magnitude lower than that of the conventional (001) n-type diamond film. (c) 2009 The Japan Society of Applied Physics

引用

页数：3

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