Optimized Design of a Silicon based MEMS Pressure Sensor for Wider range and Better Sensitivity

被引：0

作者：

Suja, K. J. ^{[1
]}

Gopal, Vidya ^{[1
]}

Komaragiri, Rama ^{[1
]}

机构：

[1] Natl Inst Technol, Dept ECE, Calicut, Kerala, India

来源：

2013 ANNUAL INTERNATIONAL CONFERENCE ON EMERGING RESEARCH AREAS & 2013 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, COMMUNICATIONS & RENEWABLE ENERGY (AICERA/ICMICR) | 2013年

关键词：

MEMS; pressure sensor; piezoresistive; surface carrier concentration; SOI; p type silicon;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Micro Electro Mechanical System pressure sensors have been simulated with different structures for obtaining wider operation range with better sensitivity. The performance has been simulated and analyzed for silicon and SOI (Silicon-on-Insulator) pressure sensors. The performance of silicon and SOI pressure sensor at a given pressure and temperature are compared. Different diaphragms structures, were designed and simulated and the performance parameters of the sensors were compared. The doping concentration of the piezoresistor is varied from 1015 cm(-3) to 10(20)cm(-3) and the sensitivity of pressure sensors were compared. A comparative study of temperature sensitivity of silicon and SOI based diaphragms in the temperature from 150K to 500K has also been evaluated in this work.

引用

页数：5

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