Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport

被引:28
作者
Sandana, V. E. [1 ,2 ,3 ]
Rogers, D. J. [1 ]
Teherani, F. Hosseini [1 ]
McClintock, R. [3 ]
Bayram, C. [3 ]
Razeghi, M. [3 ]
Drouhin, H. -J. [2 ]
Clochard, M. C. [2 ]
Sallet, V. [4 ]
Garry, G. [5 ]
Falyouni, F. [4 ]
机构
[1] Nanovation, F-91400 Orsay, France
[2] Ecole Polytech, Dept Irradiated Solids, F-91128 Palaiseau, France
[3] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA
[4] GEMAC, F-78035 Versailles, France
[5] Thales Res & Technol, F-91767 Palaiseau, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期
关键词
elemental semiconductors; II-VI semiconductors; MOCVD; nanostructured materials; photoluminescence; pulsed laser deposition; sapphire; silicon; substrates; X-ray diffraction; zinc compounds; NANOWIRES; SUBSTRATE;
D O I
10.1116/1.3137990
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article compares the forms and properties of ZnO nanostructures grown on Si(111) and c-plane sapphire (c-Al(2)O(3)) substrates using three different growth processes: metal organic chemical vapor deposition (MOCVD), pulsed laser deposition (PLD), and physical vapor transport (PVT). A very wide range of ZnO nanostructures was observed, including nanorods, nanoneedles, nanocombs, and some novel structures resembelling "bevelled" nanowires. PVT gave the widest family of nanostructures. PLD gave dense regular arrays of nanorods with a preferred orientation perpendicular to the substrate plane on both Si and c-Al(2)O(3) substrates, without the use of a catalyst. X-ray diffraction (XRD) studies confirmed that nanostructures grown by PLD were better crystallized and more highly oriented than those grown by PVT and MOCVD. Samples grown on Si showed relatively poor XRD response but lower wavelength emission and narrower linewidths in PL studies.
引用
收藏
页码:1678 / 1683
页数:6
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