AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4-7-V Threshold Voltage and 1.3-kV Breakdown Voltage

被引：23
作者：
Zhang, Li [1 ]
Zhou, Hong [1 ]
Zhang, Weihang [1 ]
Dang, Kui [1 ]
Zhang, Tao [1 ]
Ma, Peijun [1 ]
Ma, Xiaohua [1 ]
Zhang, Jincheng [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 07期
关键词：
AlGaN; GaN; gate injection transistors; E-mode; ELECTRON-MOBILITY TRANSISTORS; SI SUBSTRATE; HEMTS; METAL; LAYER;
D O I：
10.1109/LED.2018.2838542
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on demonstrating the first Al0.05Ga0.95N-channel enhancement-mode (E-mode) p-GaN gate injection transistors (GITs) with an adjustable threshold voltage (V-T) of 4-7-V by controlling the number of source-connected p-GaN bridges. To the best of our knowledge, it is the highest VT reported in p-GaN GITs. Comparing with GaN channel, the Al0.05Ga0.95N channel is used to minimize the polarization difference between channel layer and Al0.15Ga0.85N barrier layer and also increase the maximum affordable electric field of the channel so as to increase the VT and breakdown voltage. Combing with 4.3 mu m-thick buffer layer, E-mode GITs demonstrate an off-state breakdown voltage of 662, 770, 1034, and 1315 V at a gate-to-drain spacing of 5, 7, 11, and 19 mu m, respectively, showing the great promise of the AlGaN channel E-Mode GITs for future power electronics applications.
引用
收藏
页码：1026 / 1029
页数：4
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