Future navy application of wide bandgap power semiconductor devices

被引：40

作者：

Ericsen, T ^{[1
]}

机构：

[1] Off Naval Res, Arlington, VA 22217 USA

来源：

PROCEEDINGS OF THE IEEE | 2002年 / 90卷 / 06期

关键词：

naval electrical systems; power distribution; wide bandgap power semiconductor applications;

D O I：

10.1109/JPROC.2002.1021572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An assessment of future U.S. Navy electrical power requirements is presented to identify wide bandgap power device application opportunities, issues, and challenges. An emphasis is placed on blocking voltage and the potential of wide bandgap power semiconductor devices to enable higher voltage machines that can meet the U.S. Navy's future electrical power challenges. Estimates of the blocking voltage and power requirements are made for various power systems envisioned for future shipboard application. Blocking voltage estimates are made using a simplified stress level analysis to illustrate the basic concepts underlying power semi. conductor device application in U.S. Navy shipboard systems.

引用

页码：1077 / 1082

页数：6

共 6 条

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[4]

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[5]

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[6]

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