Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido) bis(dimethylamido) molybdenum

Molybdenum carbonitride films were deposited using plasma enhanced atomic layer deposition techniques with ((BuN)-Bu-t)(2)(NMe2)(2)Mo at temperatures ranging from 80 to 300 degrees C. The elemental composition of the molybdenum carbonitride films were analyzed using x-ray photoelectron spectroscopy with a MoCxNy composition extending from carbide, MoC0.45N0.08 to nitride MoC0.06N1.40 (x: 0.06-0.45; y: 0.08-1.40). The film composition, electrical properties, and optical properties are strongly dependent upon the % N-2 in H-2 of the plasma gas stream, as well as the process temperature. The molybdenum carbide film (MoC0.45N0.08) deposited at 150 degrees C achieved an electrical resistivity (q) value of 170 lXcm and exhibited superconducting behavior with a transition temperature (Tc) of 8.8 K. Nitrogen rich molybdenum carbonitride films (MoC0.28N0.44) deposited at 250 degrees C with 6% N-2 in the plasma gas showed a microcrystalline fine grained structure with a measured rho = 200 mu Omega cm. Film thickness and optical properties were characterized using spectroscopic ellipsometry with a measured growth per cycle extending from 0.36 to 0.56 angstrom/cycle. The measured optical properties extend across a broad range; refractive index (n: 3.1-3.4), and dielectric constant (k: 1.5-3.18). Grazing incidence x-ray diffraction of the MoCxNy films indicate a fine grained crystal structure, with a transition from a cubic MoC1-x phase for the carbide to a face center cubic gamma-Mo2N1+/-x phase for the nitride films. (C) 2016 American Vacuum Society.