Increased shell thickness in indium phosphide multishell quantum dots leading to efficiency and stability enhancement in light-emitting diodes

被引：24

作者：

Kim, Yohan ^{[1
,2
]}

Ippen, Christian ^{[2
]}

Greco, Tonino ^{[2
]}

Lee, Jeongno ^{[1
]}

Oh, Min Suk ^{[1
]}

Han, Chul Jong ^{[1
]}

Wedel, Armin ^{[2
]}

Kim, Jiwan ^{[1
]}

机构：

[1] Korea Elect Technol Inst, Flexible Display Res Ctr, Songnam 463816, Gyeonggi Do, South Korea

[2] Fraunhofer Inst Appl Polymer Res, D-14476 Potsdam, Germany

来源：

OPTICAL MATERIALS EXPRESS | 2014年 / 4卷 / 07期

关键词：

INP-AT-ZNSES; INP/ZNS NANOCRYSTALS; ELECTROLUMINESCENCE; PERFORMANCE; BLUE;

D O I：

10.1364/OME.4.001436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report efficient indium phosphide (InP) quantum dot-based light-emitting diodes (QD-LEDs). The current efficiency and the device stability of QD-LEDs were enhanced by increasing the thickness of ZnS outer shell of InP/ZnSe/ZnS multishell QDs. Reversible luminance degradation was observed in operation of QD-LEDs, which was hypothesized to result from QD charging. QDs having thicker ZnS shell with strong confinement suppressed the luminescence quenching as well as QD charging. Our findings about the reversible QD charging and the developed performance by the thick ZnS outer shell would help to rationalize the luminance quenching issue in QD-LED operation. (C) 2014 Optical Society of America

引用

页码：1436 / 1443

页数：8

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