Electrochemical growth and characterization of Ag-doped ZnO nanostructures

被引:8
作者
Thomas, M. A. [1 ]
Cui, J. B. [1 ]
机构
[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期
关键词
annealing; crystal morphology; II-VI semiconductors; nanostructured materials; photoluminescence; scanning electron microscopy; silver compounds; X-ray diffraction; ZINC-OXIDE NANOWIRES; FABRICATION; NUCLEATION; EMISSION; EXCITON;
D O I
10.1116/1.3130158
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Both undoped and Ag-doped ZnO nanostructures were prepared using an electrochemical process at temperatures between 60 and 95 degrees C. The samples were characterized by scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and temperature dependent photoluminescence measurements (PL). The effects of parameters such as silver nitrate concentration and the applied potential on the material growth were investigated. As grown Ag-doped samples exhibit significant differences from undoped samples as indicated by their morphology and optical properties. Furthermore, after annealing in oxygen, Ag-doped samples show different trends compared to undoped samples as evidenced by a significant decrease in defect PL emissions. Possible mechanisms for the annealing effects are discussed.
引用
收藏
页码:1673 / 1677
页数:5
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