The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers

被引：5
作者：
Vlasov, AR
Sokolovskii, BS
Monastyrskii, LS
Bonchyk, OY
Barcz, A
机构：
[1] Ivan Franko Natl Univ, UA-79005 Lvov, Ukraine
[2] NASU, Inst Appl Problems Mech & Math, UA-79601 Lvov, Ukraine
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
THIN SOLID FILMS | 2004年 / 459卷 / 1-2期
关键词：
mercury cadmium telluride; diffusion; doping;
D O I：
10.1016/j.tsf.2003.12.079
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Experiments have been carried out on As diffusion in graded-band-gap HgCdTe epitaxial layers grown by isothermal vapor-phase epitaxy (ISOVPE). For studying As and Hg concentration distribution on depth, the SIMS experimental technique was used. A non-monotonous profile of As concentration distribution has been revealed, with the maximum distribution approximately located in the region at the edge of a sharp change in composition. A model describing the influence of the built-in electric field caused by the spatial inhomogeneity of energy gap on the diffusion of the charged impurity has been proposed. A comparative analysis of theoretical and experimental data has been performed. (C) 2003 Elsevier B.V. All rights reserved.
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页码：28 / 31
页数：4
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