Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport

被引：41

作者：

Gioannini, Mariangela ^{[1
]}

Cedola, Ariel P. ^{[2
]}

Di Santo, Natale ^{[1
]}

Bertazzi, Francesco ^{[1
]}

Cappelluti, Federica ^{[1
]}

机构：

[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy

[2] Natl Univ La Plata, Grp Studies Mat & Elect Devices, Fac Engn, RA-1900 La Plata, Buenos Aires, Argentina

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2013年 / 3卷 / 04期

关键词：

Carrier dynamics; device modeling; InAs/GaAs; nanostructured solar cells; numerical simulation; quantum dots (QDs); INTERMEDIATE-BAND; EFFICIENCY; TRANSITIONS; RELAXATION; INJECTION;

D O I：

10.1109/JPHOTOV.2013.2270345

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents a device-level model of quantum dot (QD) solar cells, coupling the classical drift-diffusion equations for transport of bulk carriers with a set of rate equations describing the QD carrier dynamics. The model is applied to carry out a detailed study of the impact of thermal-assisted processes on the electrical performance of InAs/GaAs QD solar cells (QDSCs), by exploiting experimentally determined parameters for QD photogeneration and carrier kinetics. Special emphasis is given on the analysis of the open circuit voltage degradation, as well as its dependence on QD size and carrier lifetime. The modeling approach is validated by comparing simulated trends against experimental data in the literature.

引用

页码：1271 / 1278

页数：8

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