On-chip solar battery structure for CMOS LSI

被引：32

作者：

Arima, Yutaka ^{[1
]}

Ehara, Masaya ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Fukuoka 8208502, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2006年 / 3卷 / 13期

关键词：

solar battery; on-chip; CMOS; self-powered system;

D O I：

10.1587/elex.3.287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A built-in method of on-chip solar battery in a CMOS LSI is proposed. The proposed solar battery can be formed using conventional CMOS process technology. It can generate a high voltage of 0.6-0.83 V by a series connection structure of two types of p-n junction diodes formed with the CMOS circuit simultaneously on the LSI chip. The generated voltage is sufficient to drive the conventional CMOS circuit without modi. cation. The test chip was produced experimentally using conventional 0.35 mu m CMOS technology, and the drive performance of the on-chip solar battery was evaluated. The conversion efficiency of the proposed solar battery was 2.6%. The area of the solar battery required for power consumption was 6.1 mm(2)/mu W in the case of the 2000lx illumination.

引用

页码：287 / 291

页数：5