Survey of key technologies on millimeter-wave CMOS integrated circuits

被引：0
作者：
Yu, Fei [1 ,2 ]
Gao, Lei [1 ,2 ]
Li, Lixiang [1 ,2 ]
Cai, Shuo [1 ,2 ]
Wang, Wei [1 ,2 ]
Wang, Chunhua [3 ]
机构：
[1] Changsha Univ Sci & Technol, Hunan Prov Key Lab Intelligent Proc Big Data Tran, Changsha 410114, Hunan, Peoples R China
[2] Changsha Univ Sci & Technol, Sch Comp & Commun Engn, Changsha 410114, Hunan, Peoples R China
[3] Hunan Univ, Coll Informat Sci & Engn, Changsha 410082, Hunan, Peoples R China
来源：
2017 2ND INTERNATIONAL CONFERENCE ON RELIABILITY ENGINEERING (ICRE 2017) | 2018年 / 351卷
基金：
中国国家自然科学基金;
关键词：
CALIBRATION METHOD; LINE;
D O I：
10.1088/1757-899X/351/1/012011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to provide guidance for the development of high performance millimeter-wave complementary metal oxide semiconductor (MMW-CMOS) integrated circuits (IC), this paper provides a survey of key technologies on MMW-CMOS IC. Technical background of MMW wireless communications is described. Then the recent development of the critical technologies of the MMW-CMOS IC are introduced in detail and compared. A summarization is given, and the development prospects on MMW-CMOS IC are also discussed.
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页数：8
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