A Low Power Sub-GHz Wideband LNA Employing Current-Reuse and Device-Reuse Positive Shunt-Feedback Technique

被引：3
|
作者：
Cheng, Kuang-Wei [1 ]
Chen, Wei-Wei [1 ,2 ]
Yang, Shang-De [1 ,3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Novatek, Hsinchu 300, Taiwan
[3] Richtek, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2022年 / 32卷 / 12期
关键词：
Current reuse; device reuse; low noise amplifier (LNA); low power; positive shunt feedback (SFB); sub-gigahertz; wideband; NOISE;
D O I：
10.1109/LMWC.2022.3191116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, g(m) restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm(2). The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50-800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of -7.1 dBm, and power dissipation of 12 mW.
引用
收藏
页码：1455 / 1458
页数：4
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