4,340V, 40 mΩcm2 normally-off 4H-SiC VJFET

被引：8

作者：

Zhao, JH

Fursin, L

Alexandrov, P

Li, X

Weiner, M

机构：

[1] Rutgers State Univ, ECE Dept, SiCLAB, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷

关键词：

4H-SiC; power junction field-effect transistor; JFET; high voltage;

D O I：

10.4028/www.scientific.net/MSF.457-460.1161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports the demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth. With a 30 mum, 1.9X10(15)cm(-3) doped drift layer, over 4,300V VJFETs in the normally-off mode have been demonstrated with a specific on-resistance of 40 mOmegacm(2) up to a drain current density of 20A/cm(2) at 4.5V gate bias.

引用

页码：1161 / 1164

页数：4

共 6 条

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