Nonlinear optical response of photonic bandgap structures containing PbSe quantum dots

被引:7
作者
Haurylau, Mikhail
Zhang, Jidong
Weiss, Sharon M.
Fauchet, Philippe M.
Martyshkin, Dmitri V.
Rupasov, Valery I.
Krivoshlykov, Sergei G.
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[2] ALTAIR Ctr LLC, Shrewsbury, MA 01545 USA
基金
美国国家科学基金会;
关键词
PbSe; quantum dots; nanophotonics; photonic bandgap; silicon photonics;
D O I
10.1016/j.jphotochem.2006.03.026
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
New nanocomposite materials with large optical nonlinearity are important for the development and miniaturizing of active components and integrated circuits for all-optical signal processing and computing. To enable on-chip integration with silicon microelectronics nonlinear signal processing components compatible with silicon nanophotonics need to be developed. In this paper, we study the nonlinear optical response of silicon-based photonic bandgap (PBG) structures filled with PbSe quantum dot (QD) materials and experimentally demonstrate the feasibility of a new class of nonlinear nanophotonic devices for all-optical signal processing based on such microstructures. Active tuning is demonstrated for both out-of-plane components, with one-dimensional porous silicon PBG microcavities and in-plane components, using one-dimensional PBG waveguide-based microresonators. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:329 / 333
页数:5
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