Contact Hole Shrinking of Directed Self-Assembly and Its Application Based on Simulation Approach

被引：0

作者：

Kim, Sang-Kon ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea

[2] Hongik Univ, Dept Sci, Seoul 121791, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Lithography; Lithography Simulation; Shrinkage Process; Directed Self-Assembly; DSA; Block Copolymer; BCP; DIBLOCK COPOLYMERS;

D O I：

10.1166/jnn.2015.11288

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Directed self-assembly (DSA) of block copolymers (BCPs) has become an intense field of study as a complementary technique to conventional lithography for 1 x-nm semiconductor patterning. DSA contact hole (C/H) shrinking is a possible implemental technique in the DSA process. In this paper, a DSA C/H shrinking is fully modeled and simulated by using a self-consistent field theory (SCFT). Simulation results show good agreement with experiment results. In terms of this simulation, the potential of DSA C/H shrinking with thermal reflow is integrated into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. The optical proximity correction (OPC) of DSA C/H shrinking due to prepattern C/H and pitch can increase process window for DSA C/H shrinking.

引用

页码：8183 / 8186

页数：4

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