INDIUM TIN OXIDE (ITO) TRANSPARENT MEMS SWITCHES

被引：0

作者：

Lee, Byung-Kee ^{[1
]}

Song, Yong-Ha ^{[1
]}

Yoon, Jun-Bo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon, South Korea

来源：

IEEE 22ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2009) | 2009年

关键词：

FILMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents transparent conductive oxide (TCO) switches on glass substrates using indium tin oxide (ITO) for the first time. Mechanical properties of the sputtered ITO film on the glass (density : 7.3gcm(-3), Young's modulus: similar to 190GPa) were measured by X-ray reflectivity (XRR) and nano-indentation analysis. Improvement of transmittance, sheet resistance and wet-etching of 1-mu m-thick sputtered ITO was obtained through thermal annealing at 230 degrees C. The fabricated MEMS switches made of ITO with a length of 50 mu m and width of 10 mu m showed the pull-in voltage of 23V and pull-out voltage of 20V, and an excellent ON/OFF current ratio of similar to 10(6). In addition, up to 10 mu A current could flow through the transparent MEMS switch.

引用

页码：148 / 151

页数：4

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