Observation of whispering gallery modes in nonpolar m-plane GaN microdisks

被引：15

作者：

Tamboli, Adele C. ^{[1
]}

Schmidt, Mathew C. ^{[1
]}

Hirai, Asako ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Hu, Evelyn L. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

关键词：

etching; focused ion beam technology; gallium compounds; III-V semiconductors; indium compounds; ion beam effects; photoluminescence; semiconductor quantum wells; spectral line shift; whispering gallery modes; wide band gap semiconductors; GAN/INGAN MICRODISKS; EMISSION; LASERS;

D O I：

10.1063/1.3160550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated nonpolar GaN/InGaN microdisks using band-gap selective photoelectrochemical etching. These microdisks have a smoother optical cavity than our previous c-plane microdisks, and they support whispering gallery modes with quality factors as high as 2000 after a focused ion beam treatment to the quantum wells. Because of the lack of a Stokes shift in the quantum wells of these m-plane disks, absorption losses play a much more significant role than in our earlier c-plane microdisks, and the light which couples into the modes is emission from the InGaN post rather than the quantum wells within the cavity.

引用

页数：3

共 13 条

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