Depth of cut for single abrasive and cutting force in resin bonded diamond wire sawing

被引:47
作者
Liu, Tengyun [1 ]
Ge, Peiqi [1 ,2 ]
Gao, Yufei [1 ,2 ]
Bi, Wenbo [1 ,2 ]
机构
[1] Shandong Univ, Sch Mech Engn, Jinan 250061, Peoples R China
[2] Shandong Univ, Key Lab High Efficiency & Clean Mech Manufacture, Minist Educ, Jinan 250061, Peoples R China
基金
中国国家自然科学基金;
关键词
Resin bonded diamond wire saw; Depth of cut; Cutting force; BRITTLE MATERIALS; CRYSTAL SILICON; DAMAGE; POLYCRYSTALLINE; MECHANISMS; REGIME; WAFERS; DESIGN; IMPACT; MODEL;
D O I
10.1007/s00170-016-8896-6
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A new model of calculating depth of cut and cutting force was developed based on indentation fracture mechanics in order to understand the influences of processing parameters on cutting behavior of abrasives in resin bonded diamond wire sawing single crystal silicon. The random distribution characteristic of abrasives and the elasticity of resin layer were taken into account in this model, the correctness of which was verified by using the results from reference under the same processing parameters. Different processing parameter combinations were used to analyze the influences of processing parameters on the depth of cut and cutting force. The obtained results indicated that feed rate and wire speed had different effects on depth of cut and cutting force. The average depth of cut obtained under the condition of considering elasticity of resin layer was less than that got without considering this elasticity. The brittle cutting regime was the major way of material removal for resin bonded diamond wire sawing. The force ratio, total normal force to tangential force, was about 1.2. Finally, a mathematical relationship between cutting force and processing parameters was obtained.
引用
收藏
页码:1763 / 1773
页数:11
相关论文
共 35 条
[1]   Mechanisms of wafer sawing and impact on wafer properties [J].
Bidiville, A. ;
Wasmer, K. ;
Michler, J. ;
Nasch, P. M. ;
Van der Meer, M. ;
Ballif, C. .
PROGRESS IN PHOTOVOLTAICS, 2010, 18 (08) :563-572
[2]   Ductile-regime grinding. A new technology for machining brittle materials [J].
Bifano, T.G. ;
Dow, T.A. ;
Scattergood, R.O. .
Journal of engineering for industry, 1991, 113 (02) :184-189
[3]   Ductile behaviour in single-point diamond-turning of single-crystal silicon [J].
Chao, CL ;
Ma, KJ ;
Liu, DS ;
Bai, CY ;
Shy, TL .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 127 (02) :187-190
[4]   Depth of cut per abrasive in fixed diamond wire sawing [J].
Chung, Chunhui ;
Van-Nhat Le .
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2015, 80 (5-8) :1337-1346
[5]   Distribution of diamond grains in fixed abrasive wire sawing process [J].
Chung, Chunhui ;
Tsay, Gow Dong ;
Tsai, Meng-Hsiu .
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2014, 73 (9-12) :1485-1494
[6]   Generation of diamond wire sliced wafer surface based on the distribution of diamond grits [J].
Chung, Chunhui ;
Le Van Nhat .
INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING, 2014, 15 (05) :789-796
[7]   Fixed abrasive diamond wire machining - part I: process monitoring and wire tension force [J].
Clark, WI ;
Shih, AJ ;
Hardin, CW ;
Lemaster, RL ;
McSpadden, SB .
INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2003, 43 (05) :523-532
[8]   Fixed abrasive diamond wire machining - part II: experiment design and results [J].
Clark, WI ;
Shih, AJ ;
Lemaster, RL ;
McSpadden, SB .
INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2003, 43 (05) :533-542
[9]   IMPACT DAMAGE IN BRITTLE MATERIALS IN ELASTIC-PLASTIC RESPONSE REGIME [J].
EVANS, AG ;
GULDEN, ME ;
ROSENBLATT, M .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1978, 361 (1706) :343-+
[10]   Study on removal mechanism of fixed-abrasive diamond wire saw slicing monocrystalline silicon [J].
Gao, Yufei ;
Ge, Peiqi ;
Hou, Zhijian .
ADVANCES IN GRINDING AND ABRASIVE TECHNOLOGY XIV, 2008, 359-360 :450-454