Quantum-dot infrared photodetectors and focal plane arrays

被引：0
|
作者：
Razeghi, Manijeh [1 ]
Lim, Ho-Chul
Tsao, Stanley
Taguchi, Maho
Zhang, Wei
Quivy, Alain Andre
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
INFRARED TECHNOLOGY AND APPLICATIONS XXXII, PTS 1AND 2 | 2006年 / 6206卷
关键词：
quantum dot; infrared; detector; MOCVD; focal plane array;
D O I：
10.1117/12.661175
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detectivity of the order of 3x10(12) Jones was achieved at 77 K. The temperature dependent device performance was also investigated. The improved temperature insensitivity compared to QWIPs was attributed to the properties of quantum dots. The device showed a background limited performance temperature of 220 K with a 45 degrees field of view and 300K background. The current device problems are a low quantum efficiency and a stronger than expected performance degradation as a function of operating temperature. Possible ways to improve the quantum efficiency and operating temperature are discussed.
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页数：6
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