Direct evidence for asymmetric dimer on Si(100) at low temperature by means of high-resolution Si 2p photoelectron spectroscopy

被引：20

作者：

Yamashita, Y ^{[1
]}

Machida, S ^{[1
]}

Nagao, M ^{[1
]}

Yamamoto, S ^{[1
]}

Kakefuda, Y ^{[1
]}

Mukai, K ^{[1
]}

Yoshinobu, J ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 3A期

关键词：

Si(100); asymmetric dimer; symmetric dimer; photoelectron spectroscopy; Si; 2p; low temperature;

D O I：

10.1143/JJAP.41.L272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the electronic states of the Si(100) surface at low temperature by means of high-resolution Si 2p photoelectron Spectroscopy. The peak intensities of up and down atoms of the asymmetric dimer in Si 2p spectra do not change from 140 K to 55 K, showing that the number of asymmetric dimers is preserved. Therefore, we can conclude that the ground state of the dimer is asymmetric and the symmetric dimer images observed by scanning tunneling microscopy at this temperature range are due to extrinsic or dynamical intrinsic effects on the buckled dinner.

引用

页码：L272 / L274

页数：3

共 14 条

[11] Surface-Site-Selective Study of Valence Electronic Structures of Clean Si(100)-2x1 Using Si-L23VV Auger Electron-Si-2p Photoelectron Coincidence Spectroscopy
Kakiuchi, Takuhiro
Hashimoto, Shogo
Fujita, Narihiko
Tanaka, Masatoshi
Mase, Kazuhiko
Nagaoka, Shin-ichi
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2010, 79 (06)
[12] High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system
Dirko, Vladimir V.
Lozovoy, Kirill A.
Kokhanenko, Andrey P.
Voitsekhovskii, Alexander V.
NANOTECHNOLOGY, 2022, 33 (11)
[13] In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy
Hori, T
Sakamoto, H
Takakuwa, Y
Enta, Y
Kato, H
Miyamoto, N
THIN SOLID FILMS, 1999, 343 : 354 - 360
[14] Unambiguous identification of the Si 2p surface core-level shifts in Sb and Ag terminated silicon surfaces studied with high energy resolution photoemission
Quaresima, C
Cricenti, A
Ottaviani, C
Perfetti, P
Le Lay, G
JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 328 (1-2) : 187 - 192

← 1 2 →