Electrically tuned photoelectrochemical properties of ferroelectric nanostructure NaNbO3 films

被引:23
作者
Singh, Simrjit [1 ]
Khare, Neeraj [1 ]
机构
[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India
关键词
THIN-FILMS; SEMICONDUCTORS; ARRAYS; SHELL;
D O I
10.1063/1.4980100
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoelectrochemical (PEC) properties of NaNbO3 nanostructure ferroelectric films are investigated, and it is demonstrated that the efficiency of PEC water splitting can be tuned (7%-23%) by electrical polarization of the NaNbO3 films. The NaNbO3 photoelectrode is fabricated using hydrothermally synthesized NaNbO3 nanoparticles. Compared to the as-prepared photoanode, photocurrent is enhanced from 0.31 to 0.51mA/cm(2) (at 1V vs. Ag/AgCl) for the negatively polarized NaNbO3 film, whereas the photocurrent is found to decrease from 0.31 to 0.09mA/cm(2) for the positively polarized NaNbO3 film. The change in the photoelectrochemical activity after the polarization of NaNbO3 films has been attributed to the change in the conduction/valence band bending at the semiconductor/electrolyte interface, leading to a change in the efficiency of charge transfer at the interface. Mott-Schottky studies confirmed the change in band bending after polarization, and electrochemical impedance spectroscopy studies confirmed the modulation in the charge transfer process after polarization. Published by AIP Publishing.
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页数:5
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