Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model

被引：9
|
作者：
Sordi, G. [1 ]
Amaricci, A. [1 ]
Rozenberg, M. J. [1 ,2 ]
机构：
[1] Univ Paris 11, CNRS, UMR8502, Lab Phys Solide, F-91405 Orsay, France
[2] Univ Buenos Aires, FCEN, Dept Fis, RA-1428 Buenos Aires, DF, Argentina
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 03期
关键词：
MEAN-FIELD THEORY; METAL-INSULATOR TRANSITIONS; FILLED HUBBARD-MODEL; INFINITE DIMENSIONS; MAGNETIC-IMPURITIES; FERMION SYSTEMS; HEAVY FERMIONS; LANDAU THEORY; PHOTOEMISSION; COHERENCE;
D O I：
10.1103/PhysRevB.80.035129
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.
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页数：15
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