Effect of Post-annealing on the Solar Cell Performance of Cu2ZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with H2S Gas

被引：0

作者：

Lee, Jung Hun ^{[1
]}

Choi, Heon Jin ^{[2
]}

Kim, Won Mok ^{[1
]}

Jeongl, Jeung Hyun ^{[1
]}

Park, Jong Keuk ^{[1
]}

机构：

[1] KIST, IIwarang Ro 14 Gil 5, Seoul 02792, South Korea

[2] Yonsei Univ, 50 Yonsei Ro, Seoul 120749, South Korea

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

基金：

新加坡国家研究基金会;

关键词：

CZTS solar cell; metal precursor; H2S; sulfurization; post-annealing; EFFICIENCY;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The influence of post-annealing on the solar cell performance of Cu2ZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450 degrees C and then at 550 degrees C was adopted for the sulfurization of the stacked precursor in the mixed N-2+H2S atmosphere. The post-annealing was performed at 300 degrees C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.

引用

页码：0135 / 0138

页数：4

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