Efficiency limits of Si/SiO2 quantum well solar cells from first-principles calculations

被引：32

作者：

Kirchartz, Thomas ^{[1
]}

Seino, Kaori ^{[2
]}

Wagner, Jan-Martin ^{[2
]}

Rau, Uwe ^{[1
]}

Bechstedt, Friedhelm ^{[2
]}

机构：

[1] Forschungszentrum Julich, IEF5 Photovoltaik, D-52425 Julich, Germany

[2] Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期

关键词：

ab initio calculations; absorption coefficients; nanowires; photovoltaic effects; quantum well devices; solar cells; superlattices; zinc compounds; FIELD-EFFECT TRANSISTORS; ENERGY-CONVERSION; DETAILED BALANCE; PHOTOVOLTAIC APPLICATIONS; OPTICAL-PROPERTIES; CHARGE-CARRIERS; ZNO NANOWIRES; BAND-GAP; SILICON; SINGLE;

D O I：

10.1063/1.3132093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to investigate the applicability of new photovoltaic absorber materials, we show how to use first-principles calculations combined with device simulations to determine the efficiency limits of solar cells made from SiO2/Si superlattices and from coaxial ZnO/ZnS nanowires. Efficiency limits are calculated for ideal systems according to the Shockley-Queisser theory but also for more realistic devices with finite mobilities, nonradiative lifetimes, and absorption coefficients. Thereby, we identify the critical values for mobility and lifetime that are required for efficient single junction as well as tandem solar cells.

引用

页数：12

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