Alkali-free glass as a high energy density dielectric material

被引:116
作者
Smith, Nicholas J. [1 ]
Rangarajan, Badri [2 ]
Lanagan, Michael T. [1 ,2 ]
Pantano, Carlo G. [1 ]
机构
[1] Penn State Univ, Mat Res Inst, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Inst, Dept Engn Sci & Mech, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
Glass; Dielectric; Energy density; Breakdown; BREAKDOWN; CAPACITORS; BEHAVIOR; SILICON;
D O I
10.1016/j.matlet.2009.02.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
One of the greatest challenges in the development of new high energy density materials is to increase dielectric permittivity while maintaining high breakdown strength. The dielectric breakdown behavior of an alkali-free barium boroaluminosilicate glass is shown to have remarkably high DC dielectric breakdown strength (12 MV/cm) and reasonably high permittivity (similar to 6). equating to energy densities in excess of 35 J/cm(3). This behavior is attributed to highly polarizable Ba ions enhancing the real part of complex permittivity, the low loss due to the alkali-free composition. and the substantially defect-free quality of the glass and its surfaces. To our knowledge. this is the highest breakdown strength reported for a bulk glass. and rivals the breakdown strength more typically observed in pristine thin films of SiO2. These findings indicate that alkali-free multicomponent glasses may be strong candidates for next-generation high energy density storage capacitors for portable or pulsed power applications. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1245 / 1248
页数:4
相关论文
共 18 条
[1]   THICKNESS DEPENDENCE OF THE DIELECTRIC BEHAVIOR OF SIO2-FILMS FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON RESONANCE PLASMAS [J].
CHAU, TT ;
MEJIA, SR ;
KAO, KC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (01) :50-57
[2]  
DISSADO LA, 1992, ELECT DEGRADATION BR, P92904
[3]  
DOI A, 1987, J MATER SCI, V22, P4377, DOI 10.1007/BF01132032
[4]   Thermochemical description of dielectric breakdown in high dielectric constant materials [J].
McPherson, J ;
Kim, JY ;
Shanware, A ;
Mogul, H .
APPLIED PHYSICS LETTERS, 2003, 82 (13) :2121-2123
[5]  
ODWYER JJ, 1964, THEORY DIELECTRIC BR, P92904
[6]   ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].
OSBURN, CM ;
WEITZMAN, EJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :603-+
[7]   Accelerated testing of SiO2 reliability [J].
Rosenbaum, E ;
King, JC ;
Hu, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (01) :70-80
[8]   Breakdown behavior of oil-impregnated polypropylene as dielectric in film capacitors [J].
Schneuwly, A ;
Gröning, P ;
Schlapbach, L .
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 1998, 5 (06) :862-868
[9]  
*SCHOTT N AM INC, AF45 SCHOTT N AM INC, P92904
[10]  
*SCHOTT N AM INC, D263T SCHOTT N AM IN, P92904