Recent developments in rear-surface passivation at Fraunhofer ISE

被引：54

作者：

Hofmann, Marc ^{[1
]}

Janz, Stefan ^{[1
]}

Schmidt, Christian ^{[1
]}

Kambor, Stephan ^{[1
]}

Suwito, Dominik ^{[1
]}

Kohn, Norbert ^{[1
]}

Rentsch, Jochen ^{[1
]}

Preu, Ralf ^{[1
]}

Glunz, Stefan W. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Crystalline silicon; Local rear contacts; PECVD; Surface passivation; Amorphous silicon; Silicon oxide; Silicon carbide; SILICON SOLAR-CELL; CRYSTALLINE SILICON; AMORPHOUS-SILICON; RECOMBINATION; CONTACTS;

D O I：

10.1016/j.solmat.2008.11.056

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Fraunhofer ISE has a long experience in the field of surface passivation for crystalline silicon wafers. Novel rear-surface passivation layer systems have led to excellent results. Using a low-temperature passivation stack of hydrogenated amorphous silicon and plasma-enhanced chemical vapor deposition (PECVD) silicon oxide an efficiency of up to 21.7% has been achieved. Thermally stable passivation can be proven with all-PECVD stacks of silicon oxide, silicon nitride, and silicon oxide (PECVD-ONO), i.e. after contact firing. Solar cell efficiencies of up to 20.0% have been reached with PECVD-ONO. In parallel, Fraunhofer ISE is working on silicon carbide (SiCx) layers, which provide excellent and thermally stable passivation, as well deposited by PECVD. Solar cells with SiCx layers as rear passivation led to efficiencies of up to 20.2%. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1074 / 1078

页数：5

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