Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μm

被引：19

作者：

Matveev, BA ^{[1
]}

Zotova, N ^{[1
]}

Karandashev, SA ^{[1
]}

Remennyi, MA ^{[1
]}

Stus, NM ^{[1
]}

Talalakin, GN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHOTODETECTOR MATERIALS AND DEVICES VII | 2002年 / 4650卷

关键词：

detector; mid-infrared photodiodes; IR sensing; IR diode optopairs;

D O I：

10.1117/12.467661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：173 / 178

页数：6

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