60 GHz low-power LNA with high gm x Rout transconductor stages in 65 nm CMOS

被引：7

作者：

Li, Zhiqun ^{[1
,2
]}

Wang, Chong ^{[1
,2
]}

Li, Qin ^{[1
,2
]}

Wang, Zhigong ^{[1
,2
]}

机构：

[1] Southeast Univ, Inst RF & OE ICs, Nanjing, Jiangsu, Peoples R China

[2] Minist Educ, Engn Res Ctr RFICs & RF Syst, Nanjing, Jiangsu, Peoples R China

来源：

ELECTRONICS LETTERS | 2017年 / 53卷 / 04期

基金：

中国国家自然科学基金;

关键词：

low-power electronics; low noise amplifiers; CMOS analogue integrated circuits; transconductor stage; low-power low noise amplifier; CMOS technology; cascode common source-common source structure; current-reused CS-CS structure; CS transistor; DC current; equivalent transconductance; output resistance; low-power LNA circuits; average noise figure; power dissipation; power supply; frequency; 60; GHz; size; 65; nm; bandwidth; 16; 7; frequency 48 GHz to 64; power; 9; 6; mW; voltage; 1; V; noise figure 6; dB;

D O I：

10.1049/el.2016.4061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This Letter presents a 60 GHz low power low noise amplifier (LNA) with high g(m) x R-out transconductor stages in a 65-nm complementary metal oxide semiconductor (CMOS) technology. Different from the cascode and current-reused common source-common source (CS-CS) structure, the new transconductor proposed in this Letter comprises a CS transistor whose DC current is shared by other two transistors. With this configuration, the equivalent transconductance, g(m) and output resistance, R-out of the transconductor are both high while its noise figure is deteriorated slightly comparing with CS structure, making it suitable for low-power LNA circuits. From the measurement results, the LNA gets a gain of 13.4 +/- 1.5 dB and 3-dB bandwidth of 16.7 GHz (48-64.7 GHz). The average noise figure of the LNA is 6.1 dB with a power dissipation of 9.6 mW under 1 V power supply.

引用

页码：279 / 281

页数：2

共 7 条

[1]

[Anonymous], 2004, COMMUNICATIONS ENG

[2] 60 GHz SiGe LNA [J].