60 GHz low-power LNA with high gm x Rout transconductor stages in 65 nm CMOS

This Letter presents a 60 GHz low power low noise amplifier (LNA) with high g(m) x R-out transconductor stages in a 65-nm complementary metal oxide semiconductor (CMOS) technology. Different from the cascode and current-reused common source-common source (CS-CS) structure, the new transconductor proposed in this Letter comprises a CS transistor whose DC current is shared by other two transistors. With this configuration, the equivalent transconductance, g(m) and output resistance, R-out of the transconductor are both high while its noise figure is deteriorated slightly comparing with CS structure, making it suitable for low-power LNA circuits. From the measurement results, the LNA gets a gain of 13.4 +/- 1.5 dB and 3-dB bandwidth of 16.7 GHz (48-64.7 GHz). The average noise figure of the LNA is 6.1 dB with a power dissipation of 9.6 mW under 1 V power supply.