Stoichiometric p-type Cu2O thin films prepared by reactive sputtering with facing target

被引：18
作者：
Ahn, Jeung Sun [1 ]
Pode, Ramchandra [1 ]
Lee, Kwang Bae [2 ]
机构：
[1] Kyung Hee Univ, Dept Phys, Seoul 02453, South Korea
[2] Sangji Univ, Dept Appl Phys & Elect, Wonju 26339, Gangwondo, South Korea
来源：
THIN SOLID FILMS | 2017年 / 623卷
关键词：
p-Type Cu2O thin film; Facing target sputtering; Stoichiometry; Vacuum annealing; Hall mobility; DEPOSITED CU2O;
D O I：
10.1016/j.tsf.2017.01.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the high quality p-type Cu2O thin films produced by the post vacuum annealing process of Cu2O thin films deposited on glass substrates at room temperature by facing target sputtering. As-deposited stoichiometric films show the high Cu2O (111)-axis orientation with the minimum value of electrical resistivity of 17 Omega cm. Furthermore, the XRD peaks intensities continuously decrease around the stoichiometric 2 theta value of 36.4 degrees with increasing the O-2 partial pressure. With the vacuum annealing at 550 degrees C with optimized oxygen ambient, the high quality p-type Cu2O thin film could be obtained. The highest value of Hall mobility mu(H) of 61 cm(2)/Vs is obtained for a vacuum annealed stoichiometric p-type Cu2O thin film. Such high value of mu(H) in the described stoichiometric p-type Cu2O thin film is believed to be due to the minimized oxygen vacancies induced by optimized vacuum annealing of a stoichiometric as-deposited Cu2O thin film. (C) 2017 Published by Elsevier B.V.
引用
收藏
页码：121 / 126
页数：6
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