Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

被引：14
作者：
Chen, Chun-Wei
Lai, Po-Hsien
Lour, Wen-Shiung
Guo, Der-Feng
Tsai, Jung-Hui
Liu, Wen-Chau
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan
[3] Chinese Air Force Acad, Dept Elect Engn, Kangsun, Kaohsiung Cty, Taiwan
[4] Natl Kaohsiung Normal Univ, Dept Elect Engn, Yanchao Township 82444, Kaohsiung Cty, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 09期
关键词：
D O I：
10.1088/0268-1242/21/9/024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an interesting thermally stable In0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. Good dc and RF characteristics are obtained by precisely depositing gold (Au) upon the In0.42Al0.58As barrier layer as the Schottky contact metal. For a MHEMT with gate dimensions of 1 x 100 mu m(2), high gate-drain breakdown voltage, high turn-on voltage, low gate leakage current density, high maximum transconductance with broad operating regime and low output conductance are obtained even at ambient temperatures up to 510 K (240 degrees C). The studied device also shows a very good microwave performance at room temperature. Moreover, the relatively low variations of the device performance are achieved over a wide temperature range (from 300 to 510 K). Therefore, the studied device has a good thermally stable performance that is suitable for high-speed and high-power electronic applications.
引用
收藏
页码：1358 / 1363
页数：6
相关论文
共 22 条
[1]   Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage [J].
Boudrissa, M ;
Delos, E ;
Cordier, Y ;
Théron, D ;
De Jaeger, JC .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (11) :512-514
[2]   A1INAS-GAINAS HEMTS UTILIZING LOW-TEMPERATURE A1INAS BUFFERS GROWN BY MBE [J].
BROWN, AS ;
MISHRA, UK ;
CHOU, CS ;
HOOPER, CE ;
MELENDES, MA ;
THOMPSON, M ;
LARSON, LE ;
ROSENBAUM, SE ;
DELANEY, MJ .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :565-567
[3]  
CHAN YJ, 1995, IEEE T ELECTRON DEV, V42, P1745
[4]   Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors [J].
Chang, WL ;
Pan, HJ ;
Wang, WC ;
Thei, KB ;
Cheng, SY ;
Lour, WS ;
Liu, WC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (12A) :L1385-L1387
[5]   Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor [J].
Chen, YJ ;
Lee, CS ;
Wang, TB ;
Hsu, WC ;
Chen, YW ;
Su, KH ;
Wu, CL .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08) :5903-5908
[6]   InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations [J].
Chen, YJ ;
Hsu, WC ;
Chen, YW ;
Lin, YS ;
Hsu, RT ;
Wu, YH .
SOLID-STATE ELECTRONICS, 2005, 49 (02) :163-166
[7]   Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors [J].
Chen, YJ ;
Hsu, WC ;
Lee, CS ;
Wang, TB ;
Tseng, CH ;
Huang, JC ;
Huang, DH ;
Wu, CL .
APPLIED PHYSICS LETTERS, 2004, 85 (21) :5087-5089
[8]   AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: From material to device [J].
Cordier, Y ;
Bollaert, S ;
Zaknoune, M ;
diPersio, J ;
Ferre, D .
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, :211-214
[9]   Optimum design and fabrication of InAlAs InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation [J].
Higuchi, K ;
Matsumoto, H ;
Mishima, T ;
Nakamura, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) :1312-1318
[10]   IMPROVED MODEL FOR KINK EFFECT IN ALGAAS/INGAAS HETEROJUNCTION FETS [J].
HORI, Y ;
KUZUHARA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2262-2267
123