Evaluation of Perovskite Photo-sensors with Electron-beam Evaporated Titanium Dioxide Films

被引：1
|
作者：
Hossain, M. F. [1 ,2 ]
Hirano, I [1 ]
Naka, S. [1 ]
Okada, H. [1 ]
机构：
[1] Univ Toyama, Grad Sch Sci & Engn, 3190 Gofuku, Toyama 9308555, Japan
[2] Rajshahi Univ Engn & Technol, Dept Elect & Elect Engn, Rajshahi 6204, Bangladesh
来源：
2019 TWENTY-SIXTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS | 2019年
关键词：
TEMPERATURE; PERFORMANCE;
D O I：
10.23919/am-fpd.2019.8830581
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500 degrees C. Device structure is ITO/ TiO2/ Perovskite layer/ 2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/ Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1 x10(3) without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.
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页数：4
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