Investigation of Shockley-read-hall Recombination in Deep-ultraviolet Light-emitting Diodes

被引：0

作者：

Kuo, Yen-Kuang ^{[1
]}

Chen, Fang-Ming ^{[2
]}

Chang, Jih-Yuan ^{[3
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[3] Natl Changhua Univ Educ, Ctr Teacher Educ, Changhua 500, Taiwan

来源：

OPTICS, PHOTONICS AND LASERS (OPAL 2019) | 2019年

关键词：

AlGaN; Deep-ultraviolet; Light-emitting diodes; Shockley-Read-Hall recombination; Numerical simulation;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Effect of Shockley-Read-Hall (SRH) recombination in deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the internal quantum efficiency (IQE) of typical DUV LED increases with the increase of number of quantum wells (QWs) due to the suppression of Auger recombination. However, when the crystalline quality of DUV LED is low, i.e., when the LED is with short SRH lifetime, the IQE may decrease when the number of QWs increases even though the Auger recombination still reduces, which is due mainly to the deteriorated SRH recombination in DUV LEDs which are with poor crystalline quality.

引用

页码：6 / 8

页数：3

共 3 条

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[2] Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes [J].

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[3]

Kuo Y.-K., 2017, IEEE J QUANT ELECT, V53, DOI [10.1364/OE.15.011213, DOI 10.1364/OE.15.011213]

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