DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT

被引：5

作者：

Chen, Jun-Da ^{[1
]}

Ye, Cheng-Kai ^{[1
]}

机构：

[1] Natl Quemoy Univ, Dept Elect Engn, Jinning Township, Taiwan

来源：

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS | 2014年 / 23卷 / 08期

关键词：

Bandgap reference circuits; temperature coefficient; analog circuits; VOLTAGE REFERENCE;

D O I：

10.1142/S0218126614501072

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 mu m standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature co-efficient (TC) of 3.96 ppm/degrees C within the temperature range from -60 degrees C to 130 degrees C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40 degrees C to 80 degrees C, the circuit achieves the lowest reported TC of 2.09 ppm/degrees C. The reference current is 16.586 mu A. This circuit provides good performances in a wide range of temperature with very small TC.

引用

页数：17

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