Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm

被引：78

作者：

Spano, R. ^{[1
]}

Daldosso, N. ^{[1
]}

Cazzanelli, M. ^{[1
]}

Ferraioli, L. ^{[1
]}

Tartara, L. ^{[3
]}

Yu, J. ^{[3
]}

Degiorgio, V. ^{[3
]}

Jordana, E. ^{[2
]}

Fedeli, J. M. ^{[2
]}

Pavesi, L. ^{[1
]}

机构：

[1] Univ Trent, Dipartimento Fis, Nanosci Lab, I-38050 Povo, Italy

[2] CEA LETI, F-38054 Grenoble 9, France

[3] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 05期

关键词：

OPTICAL NONLINEARITIES;

D O I：

10.1364/OE.17.003941

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a detailed investigation of the different processes responsible for the optical nonlinearities of silicon nanocrystals at 1550 nm. Through z-scan measurements, the bound-electronic and excited carrier contributions to the nonlinear refraction were measured in presence of two-photon absorption. A study of the nonlinear response at different excitation powers has permitted to determine the change in the refractive index per unit of photo-excited carrier density sigma(r) and the value of the real bound-electronic nonlinear refraction n(2be) as a function of the nanocrystals size. Moreover at high excitation power, a saturation of the nonlinear absorption was observed due to band-filling effects. (C) 2009 Optical Society of America

引用

页码：3941 / 3950

页数：10

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