III-V on silicon avalanche photodiodes by heteroepitaxy

被引：22

作者：

Yuan, Yuan ^{[1
]}

Jung, Daehwan ^{[2
,3
]}

Sun, Keye ^{[1
]}

Zheng, Jiyuan ^{[1
]}

Jones, Andrew H. ^{[1
]}

Bowers, John E. ^{[2
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

来源：

OPTICS LETTERS | 2019年 / 44卷 / 14期

关键词：

Epitaxial growth - Semiconducting indium phosphide - Gallium compounds - Indium phosphide - III-V semiconductors - Silicon;

D O I：

10.1364/OL.44.003538

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k similar to 0.2 as InAlAs APDs on InP. (C) 2019 Optical Society of America

引用

页码：3538 / 3541

页数：4

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JOURNAL OF LIGHTWAVE TECHNOLOGY, 2016, 34 (02) :278-285

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