III-V on silicon avalanche photodiodes by heteroepitaxy

被引：21

作者：

Yuan, Yuan ^{[1
]}

Jung, Daehwan ^{[2
,3
]}

Sun, Keye ^{[1
]}

Zheng, Jiyuan ^{[1
]}

Jones, Andrew H. ^{[1
]}

Bowers, John E. ^{[2
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

来源：

OPTICS LETTERS | 2019年 / 44卷 / 14期

关键词：

Epitaxial growth - Semiconducting indium phosphide - Gallium compounds - Indium phosphide - III-V semiconductors - Silicon;

D O I：

10.1364/OL.44.003538

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k similar to 0.2 as InAlAs APDs on InP. (C) 2019 Optical Society of America

引用

页码：3538 / 3541

页数：4

共 30 条

[1] Adachi S., 1992, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
[2] [Anonymous], AEIT INT ANN C AEIT
[3] [Anonymous], IEEE J LIGHTWAVE TEC
[4] [Anonymous], IEEE PHOT C IPC
[5] [Anonymous], OPT FIB COMM C OFC
[6] [Anonymous], C LAS EL CLEO SCI IN
[7] Bowers JE, 2014, 2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)
[8] Bowers JE, 2016, CONF LASER ELECTR
[9] Recent Advances in Silicon Photonic Integrated Circuits
Bowers, John E.
Komljenovic, Tin
Davenport, Michael
Hulme, Jared
Liu, Alan Y.
Santis, Christos T.
Spott, Alexander
Srinivasan, Sudharsanan
Stanton, Eric J.
Zhang, Chong
[J]. NEXT-GENERATION OPTICAL COMMUNICATION: COMPONENTS, SUB-SYSTEMS, AND SYSTEMS V, 2016, 9774
[10] Recent Advances in Avalanche Photodiodes
Campbell, Joe C.
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2016, 34 (02) : 278 - 285

← 1 2 3 →