Integrated circuits using fully solution-processed organic TFT devices with printed silver electrodes

We have demonstrated fully solution-processed inverter, NAND and NOR circuits using pseudo-CMOS logic and p-type organic TFT devices with printed electrodes that were fabricated using ink-jet printed silver nanoparticle inks at low temperatures. In order to optimize the gate electrode profiles, we thoroughly assessed the surface wettability of the silver nanoparticle inks. The pseudo-CMOS inverter circuit exhibited exceptional switching characteristics with a high signal gain of 34 at a supply voltage of 20 V. The NAND and NOR circuits also exhibited excellent logic characteristics, whereby the switching voltage was approximately V-DD/2 with a high noise margin and short delay time of 12.5 ms. (C) 2013 Elsevier B. V. All rights reserved.