Formation of metastable bc8 phase from crystalline Si0.5Ge0.5 by high-pressure torsion

被引：15

作者：

Ikoma, Yoshifumi ^{[1
]}

Yamasaki, Terumasa ^{[1
]}

Shimizu, Takahiro ^{[1
]}

Takaira, Marina ^{[1
]}

Kohno, Masamichi ^{[2
,3
]}

Guo, Qixin ^{[4
]}

McCartney, Martha R. ^{[5
]}

Smith, David J. ^{[5
]}

Arai, Yasutomo ^{[6
]}

Horita, Zenji ^{[4
,7
,8
]}

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan

[2] Kyushu Univ, Dept Mech Engn, Fukuoka 8190395, Japan

[3] Kyushu Univ, Int Inst Carbon Neutral Energy Res I2CNER, Fukuoka 8190395, Japan

[4] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[5] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[6] Japan Aerosp Explorat Agcy, Kibo Utilizat Ctr, Tsukuba, Ibaraki 3058505, Japan

[7] Kyushu Inst Technol, Grad Sch Engn, Kitakyushu, Fukuoka 8048550, Japan

[8] Kumamoto Univ, Magnesium Res Ctr, Kumamoto 8608555, Japan

来源：

MATERIALS CHARACTERIZATION | 2020年 / 169卷

基金：

日本学术振兴会;

关键词：

Severe plastic deformation; High-pressure torsion; Semiconductors; Phase transformations; Metastable phase; HRTEM; ELECTRON-MICROSCOPY ANALYSIS; ULTRAFINE-GRAINED MATERIALS; SEVERE PLASTIC-DEFORMATION; NANOGRAINED SILICON; AMORPHOUS PHASES; GERMANIUM; TRANSFORMATION; TRANSITION; GE; SI;

D O I：

10.1016/j.matchar.2020.110590

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si0.5Ge0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si0.5Ge0.5 (similar to 9 x 10(-3) Omega.cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si0.5Ge0.5 is similar to that of bc8-Si.

引用

页数：5

共 52 条

[1] ELECTRICAL-PROPERTIES OF SEMIMETALLIC SILICON-III AND SEMICONDUCTIVE SILICON-IV AT AMBIENT PRESSURE [J].