Tunable thermal conductivity of Si1-xGex nanowires

被引：111

作者：

Chen, Jie ^{[1
,2
]}

Zhang, Gang ^{[3
]}

Li, Baowen ^{[1
,2
,4
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore

[3] Inst Microelect, Singapore 117685, Singapore

[4] NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

Ge-Si alloys; localised states; molecular dynamics method; nanowires; phonons; reduction (chemical); semiconductor materials; semiconductor quantum wires; thermal conductivity; MOLECULAR-DYNAMICS SIMULATION; SILICON NANOWIRES; THERMOELECTRIC-MATERIALS; TEMPERATURE; SUPERLATTICES; GERMANIUM; FILMS; MERIT;

D O I：

10.1063/1.3212737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-xGex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-xGex NW might have promising application in thermoelectrics.

引用

页数：3

共 37 条

[1] Vibrations and thermal transport in nanocrystalline silicon
Bodapati, Arun
Schelling, Patrick K.
Phillpot, Simon R.
Keblinski, Pawel
[J]. PHYSICAL REVIEW B, 2006, 74 (24)
[2] Silicon nanowires as efficient thermoelectric materials
Boukai, Akram I.
Bunimovich, Yuri
Tahir-Kheli, Jamil
Yu, Jen-Kan
Goddard, William A., III
Heath, James R.
[J]. NATURE, 2008, 451 (7175) : 168 - 171
[3] Breakdown of Fourier's law in nanotube thermal conductors
Chang, C. W.
Okawa, D.
Garcia, H.
Majumdar, A.
Zettl, A.
[J]. PHYSICAL REVIEW LETTERS, 2008, 101 (07)
[4] CHEN G, 2006, ENCY NANOSCIENCE NAN, V7, P429
[5] MOLECULAR-DYNAMICS SIMULATION OF AMORPHOUS-GERMANIUM
DING, KJ
ANDERSEN, HC
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 6987 - 6991
[6] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K
DISMUKES, JP
EKSTROM, E
BEERS, DS
STEIGMEIER, EF
KUDMAN, I
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2899 - &
[7] New directions for low-dimensional thermoelectric materials
Dresselhaus, Mildred S.
Chen, Gang
Tang, Ming Y.
Yang, Ronggui
Lee, Hohyun
Wang, Dezhi
Ren, Zhifeng
Fleurial, Jean-Pierre
Gogna, Pawan
[J]. ADVANCED MATERIALS, 2007, 19 (08) : 1043 - 1053
[8] Molecular dynamics simulation of thermal conductivity of nanoscale thin silicon films
Feng, XL
Li, ZX
Guo, ZY
[J]. MICROSCALE THERMOPHYSICAL ENGINEERING, 2003, 7 (02): : 153 - 161
[9] THERMOELECTRIC FIGURE OF MERIT OF A ONE-DIMENSIONAL CONDUCTOR
HICKS, LD
DRESSELHAUS, MS
[J]. PHYSICAL REVIEW B, 1993, 47 (24): : 16631 - 16634
[10] Enhanced thermoelectric performance of rough silicon nanowires
Hochbaum, Allon I.
Chen, Renkun
Delgado, Raul Diaz
Liang, Wenjie
Garnett, Erik C.
Najarian, Mark
Majumdar, Arun
Yang, Peidong
[J]. NATURE, 2008, 451 (7175) : 163 - U5

← 1 2 3 4 →