Introduction of atomic H into Si3N4/SiO2/Si stacks

被引：5

作者：

Jin Hao ^{[1
]}

Weber, K. J.

Li Weitang

Blakers, A. W.

机构：

[1] Australian Natl Univ, Ctr Sustainable Energy Syst, Fac Engn & Informat Technol, Canberra, ACT 0200, Australia

[2] Australian Natl Univ, Res Sch Phys, Canberra, ACT 0200, Australia

来源：

RARE METALS | 2006年 / 25卷

基金：

澳大利亚研究理事会;

关键词：

LPCVD; SiO2; passivation; anneal;

D O I：

10.1016/S1001-0521(07)60063-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic H generated by a plasma NH3 source at 400 degrees C was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N-2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N-2 were carried out in order to determine the optimized annealing conditions.

引用

页码：150 / 152

页数：3

共 4 条

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CARTIER, E
STATHIS, JH
BUCHANAN, DA
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1510 - 1512
[3] Hydrogen reintroduction by forming gas annealing to LPCVD silicon nitride coated structures
Jin, Hao
Weber, K. J.
Deenapanray, P. N. K.
Blakers, A. W.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (08) : G750 - G754
[4] MCCANN MJ, 2001, 17 EC PV C MUN, P1708

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