De Haas-van Alphen effect in GdAs

被引：9

作者：

Nakanishi, Y ^{[1
]}

Takahashi, F

Sakon, T

Yoshida, M

Li, DX

Suzuki, T

Motokawa, M

机构：

[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Grad Sch Sci, Sendai, Miyagi 9808578, Japan

来源：

PHYSICA B | 2000年 / 281卷

关键词：

Gd-monopnictides; de Haas-van Alphen effect; carrier concentration;

D O I：

10.1016/S0921-4526(99)01030-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however. GdAs has less carrier concentration compared to that of GdSb. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：750 / 751

页数：2

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