Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC

被引：10

作者：

Siad, M. ^{[1
]}

Vargas, C. Pineda ^{[2
]}

Nkosi, M. ^{[2
]}

Saidi, D. ^{[1
]}

Souami, N. ^{[1
]}

Daas, N. ^{[1
]}

Chami, A. C. ^{[3
]}

机构：

[1] Ctr Rech Nucl Alger, Algiers, Algeria

[2] iThemba Labs, Mat Res Grp, Cape Town, South Africa

[3] USTHB, Fac Phys, Bab Ezzouar, Alger, Algeria

来源：

APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 01期

关键词：

SiC; Ohmic contacts; Nickel; Titanium; RBS; XRD; AES; SILICON-CARBIDE; OHMIC CONTACT; SCHOTTKY; FILM; TITANIUM; SEMICONDUCTOR; DIODES;

D O I：

10.1016/j.apsusc.2009.08.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the Ni/SiC and the Ni/Ti/SiC contacts is particularly studied by RBS at 3.2 MeV, XRD and AES techniques. (C) 2009 Elsevier B. V. All rights reserved.

引用

收藏

页码：256 / 260

页数：5

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