MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire

We fabricated beta-Ga2O3:Si metal-oxide field-effect transistors (MOSFETs) on c-plane sapphire substrates which typically showed maximum drain current of 100 mA mm(-1). beta-Ga2O3 :Si thin films were realized on c-plane sapphire substrates through a combination of metalorganic chemical vapor deposition and post-annealing. The MOSFET device presented excellent on/off drain current ratio of similar to 10(11) with very low gate leakage current, sharp pinch off behavior, and a breakdown voltage of 400 V at V-G = -40 V. The growth and fabrication of beta-Ga2O3:Si MOSFETs on c-plane sapphire is valuable to its demonstration of the great potential for future high-power electronic devices. (C) 2019 The Japan Society of Applied Physics