Upconversion emissions from high energy levels of Tb3+ under near-infrared laser excitation at 976 nm

被引：12

作者：

Xue, Xiaojie ^{[1
]}

Cheng, Tonglei ^{[1
]}

Suzuki, Takenobu ^{[1
]}

Ohishi, Yasutake ^{[1
]}

机构：

[1] Toyota Technol Inst, Res Ctr Adv Photon Technol, Tempa Ku, Nagoya, Aichi 4688511, Japan

来源：

OPTICAL MATERIALS EXPRESS | 2015年 / 5卷 / 12期

关键词：

LUMINESCENCE PROPERTIES; IONS; PHOTOLUMINESCENCE; NANOCRYSTALS; BEHAVIOR; GLASS; CE3+; GD3+; RE;

D O I：

10.1364/OME.5.002768

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultraviolet upconversion emissions from high energy levels (D-5(1), L-5(8), L-5(9), (5)G(5), and L-5(10)) of Tb3+ were observed in the NaYF4:Tb3+, Yb3+ microcrystals under excitation of a 976 nm laser diode at room temperature. These energy levels were populated by energy transfer and excited state absorption processes. Power dependence measurements confirmed it was caused by a three-photon upconversion process. Concentration quenching did not strongly affect the population of these levels. (C) 2015 Optical Society of America

引用

页码：2768 / 2776

页数：9

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