Properties of AlxGa1-xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

被引：14

作者：

He, L ^{[1
]}

Reshchikov, MA ^{[1
]}

Yun, F ^{[1
]}

Huang, D ^{[1
]}

King, T ^{[1
]}

Morkoç, H ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23220 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期

关键词：

D O I：

10.1063/1.1506206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN films were grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates under Ga-rich conditions. To control the AlxGa1-xN composition over the entire range, the Al and Ga arrival rates were fixed while the nitrogen arrival rate was varied. We have found that the Al fraction increased with decreasing N flow due to preferentially favorable bonding of Al and N over Ga and N. Consequently, the growth rate decreased as the Al mole fraction increased. A photoluminescence quantum efficiency at 15 K was markedly higher for the AlxGa1-xN layers grown under Ga-rich conditions (3%-48%) compared to the layers grown under N-rich conditions (1%-10%), indicating much reduced nonradiative recombination in samples grown under Ga-rich conditions. (C) 2002 American Institute of Physics.

引用

页码：2178 / 2180

页数：3

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